UM BASE CONFIGURATION

To provide a method for bonding an electrostatic chuck to a temperature control base that prevents localized delamination due to stress caused by thermal expansion.SOLUTION: In a method of bonding an electrostatic chuck 100 in which a substrate W is removably placed on the upper surface of a dielect...

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Bibliographische Detailangaben
Hauptverfasser:	LINDLEY ROGER ALAN, VIJAY D PARKHE
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LIME, MAGNESIA METALLURGY REFRACTORIES SEMICONDUCTOR DEVICES SLAG TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	To provide a method for bonding an electrostatic chuck to a temperature control base that prevents localized delamination due to stress caused by thermal expansion.SOLUTION: In a method of bonding an electrostatic chuck 100 in which a substrate W is removably placed on the upper surface of a dielectric 102 to a temperature control base 104, a bonding layer 106 is formed between the dielectric including the electrostatic chuck and the temperature control base. A flow aperture 112 passes through the dielectric, and matches a flow aperture in the temperature control base. The bonding layer is configured with an opening that aligns with an aperture in the dielectric and the temperature control base.SELECTED DRAWING: Figure 1 【課題】熱膨張によって引き起こされる応力による局所的な剥離を防ぐ静電チャックを温度制御ベースに接合する方法を提供する。【解決手段】基板Ｗを誘電体１０２の上面上に脱着可能に配置する静電チャック１００を温度制御ベース１０４に接合する方法であり、ボンディング層１０６は、静電チャックを備える誘電体と温度制御ベースとの間に形成される。フローアパーチャ１１２が誘電体を貫通し、温度制御ベースにおけるフローアパーチャと整合する。また、ボンディング層は開口部を有して構成され、開口部は、誘電体及び温度制御ベース内のアパーチャと整合する。【選択図】図１