RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN

To provide a resist composition and the like which allow a resist pattern having good LER to be produced.SOLUTION: The resist composition contains: an acid generator containing a salt represented by formula (I); and a resin containing a structural unit having an acid-labile group and a structural un...

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Hauptverfasser:	ADACHI YUKAKO, ICHIKAWA KOJI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	To provide a resist composition and the like which allow a resist pattern having good LER to be produced.SOLUTION: The resist composition contains: an acid generator containing a salt represented by formula (I); and a resin containing a structural unit having an acid-labile group and a structural unit represented by formula (a2-A). [In the formula (I), R1-R5 each represent a halogen atom or a perfluoroalkyl group; R6-R8 each represent a halogen atom, a hydroxy group or the like; m5 represents an integer of 1-5; m6 and m7 represent integers of 0-3; m8 represents an integer of 0-4; and Q1 and Q2 each represent a fluorine atom or a perfluoroalkyl group.]SELECTED DRAWING: None 【課題】良好なＬＥＲを有するレジストパターンを製造し得るレジスト組成物等を提供することを目的とする。【解決手段】式（Ｉ）で表される塩を含有する酸発生剤と、酸不安定基を有する構造単位及び式（ａ２－Ａ）で表される構造単位を含む樹脂とを含有するレジスト組成物。JPEG2023169194000147.jpg49105［式中、Ｒ１－Ｒ５はそれぞれハロゲン原子又はペルフルオロアルキル基；Ｒ６－Ｒ８はそれぞれハロゲン原子、ヒドロキシ基等；ｍ５は１～５、ｍ６、ｍ７は０～３、ｍ８は０～４の整数；Ｑ１及びＱ２はそれぞれフッ素原子又はペルフルオロアルキル基を表す。］【選択図】なし