DIAMOND FORMATION APPARATUS USING HIGH-FREQUENCY PLASMA CVD

To provide a diamond formation apparatus using high-frequency plasma CVD to solve such the problem that a microwave plasma CVD device, a hot filament CVD device and the like have been developed to form a diamond film as a power semiconductor material, however, high-speed film deposition is difficult for them because the former has a problem in acquiring a large area due to restriction of wavelength and the latter has a problem that high-temperature for densification to generate thermoelectron and control of the temperature of a substrate are in a tradeoff relation.SOLUTION: A diamond formation apparatus using high-frequency plasma CVD includes: a ladder-type radiation heating and plasma generating electrode that doubles heating a substrate with radiation and generating high-frequency plasma; a direct-current power supply including a coil for blocking intrusion of high-frequency power; and a high-frequency power supply including a capacitor for blocking intrusion of direct-current power. The diamond formation apparatus using high-frequency plasma CVD supplies a direct-current and high-frequency power respectively from the direct-current power supply and the high-frequency power supply to the electrode to convert a mixed gas of a carbon-containing gas, which is a raw material gas, and hydrogen into plasma and to form a diamond.SELECTED DRAWING: Figure 1 【課題】パワー半導体材料としてのダイヤモンド膜の形成のために、マイクロ波プラズマＣＶＤ装置及び熱フィラメントＣＶＤ装置等が開発されている。前者は波長の制約により大面積化が困難であり、後者は熱電子の発生の高密度化のための高温化と基板温度の制御がトレードオフの関係にあることにより、高速成膜化が困難という課題がある。この問題を解決可能な高周波プラズマＣＶＤによるダイヤモンド形成装置を提供すること。【解決手段】基板の輻射加熱と高周波プラズマの発生を兼備する梯子型の輻射加熱兼用プラズマ発生電極と、高周波電力の侵入を遮断するコイルを備えた直流電源と、直流電力の侵入を遮断するコンデンサーを備えた高周波電源と、を具備し、前記電極に前記直流電源及び前記高周波電源からそれぞれに直流及び高周波電力を供給することにより、原料ガスである炭素含有ガスと水素の混合ガスをプラズマ化して、ダイヤモンドを形成することを特徴とする。【選択図】図１