SUBSTRATE FOR SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE
To provide a substrate for a semiconductor device capable of manufacturing a semiconductor device that can be easily and reliably mounted even on a mounting board in which wiring is densely formed, a manufacturing method thereof, and a semiconductor device using the substrate for a semiconductor dev...
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| Format: | Patent |
| Sprache: | eng ; jpn |
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| Zusammenfassung: | To provide a substrate for a semiconductor device capable of manufacturing a semiconductor device that can be easily and reliably mounted even on a mounting board in which wiring is densely formed, a manufacturing method thereof, and a semiconductor device using the substrate for a semiconductor device.SOLUTION: In a substrate for a semiconductor device, a metal portion 11 that becomes at least an electrode portion 11b is formed on a mother board 10, a partially protruding protrusion 11d is provided on the mother board surface side of the metal portion 11, and a metal film 21 is formed only on the surface of the protrusion. A recess 20 is formed in a formation region of the metal portion 11 on the mother board 10. The metal film 21 is formed on the surface inside the recess 20. The protrusion 11d is made of metal and is formed on the metal film 21 and embedded in the recess 20. The metal portion 11 is formed on the mother board 10 and the protrusion 11d.SELECTED DRAWING: Figure 2
【課題】配線が密集して形成された実装基板にも容易で信頼性良く実装可能な半導体装置を製造できる半導体装置用基板とその製造方法、この半導体装置用基板を用いた半導体装置を提供する。【解決手段】母型基板１０上に、少なくとも電極部１１ｂとなる金属部１１が形成されており、該金属部１１の母型基板面側には部分的に突出する突出部１１ｄが設けられ、該突出部の表面のみに金属膜２１が形成されている半導体装置用基板である。母型基板１０上の金属部１１形成領域に凹部２０が形成されている。金属膜２１は、凹部２０内の表面に形成されている。突出部１１ｄは、金属で構成され、金属膜２１上であって凹部２０内に埋設して形成されている。金属部１１は、母型基板１０上および突出部１１ｄ上に形成されている。【選択図】図２ |
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