SEMICONDUCTOR DEVICE

To suppress the variation in the switching time due to the temperature change.SOLUTION: A resistor component 20 having the reverse characteristics to the temperature dependence of a gate current of a power transistor 100 subjected to switching control by a switching control unit 200 is provided in t...

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Bibliographische Detailangaben
Hauptverfasser:	HARADA SHINSUKE, YAO ATSUSHI, OKAMOTO MITSUHISA, SATO HIROSHI, KATO FUMIKI, SATO SHINJI, HOZOJI HIROYUKI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	To suppress the variation in the switching time due to the temperature change.SOLUTION: A resistor component 20 having the reverse characteristics to the temperature dependence of a gate current of a power transistor 100 subjected to switching control by a switching control unit 200 is provided in the switching control unit 200, and the change in the gate current following the temperature change is suppressed by the change in the resistor component 20 following the temperature change.SELECTED DRAWING: Figure 3 【課題】温度変化によるスイッチング時間の変動を抑制する。【解決手段】スイッチング制御部２００でスイッチング制御されるパワートランジスタ１００のゲート電流の温度依存性と逆特性を有する抵抗成分２０をスイッチング制御部２００に設けて、温度変化に伴うゲート電流の変化が温度変化に伴う上述した抵抗成分２０の変化で抑制される。【選択図】図３