DIAMOND FORMATION DEVICE BY HIGH-FREQUENCY PLASMA CVD

To provide a diamond formation device by high-frequency plasma CVD so as to solve the problem that although a microwave plasma CVD device and a hot filament CVD device, etc., are developed for formation of a diamond film as a power semiconductor material, it is difficult for the former to have a larger area because of wavelength restrictions and it is also difficult for the latter to achieve high-speed film deposition because of trade-off relation between increased temperature for higher density of generation of thermal electrons and control over a substrate temperature.SOLUTION: A diamond formation device by high-frequency plasma CVD comprises a radiation heating and plasma generating electrode used in common for heating of a substrate by radiation and generation of high-frequency plasma, a DC power supply comprising a coil blocking the entry of high-frequency electric power, and a high-frequency power supply comprising a capacitor blocking the entry of DC electric power. The radiation heating and plasma generating electrode is supplied with the DC electric power from the DC power supply and with the high-frequency electric power from the high-frequency power supply so as to form diamond by making methane and hydrogen of raw material gas into plasma.SELECTED DRAWING: Figure 1 【課題】パワー半導体材料としてのダイヤモンド膜形成のために、マイクロ波プラズマＣＶＤ装置及び熱フィラメントＣＶＤ装置等が開発されている。前者は波長の制約により大面積化が困難であり、後者は熱電子の発生の高密度化のための高温化と基板温度の制御がトレードオフの関係にあることにより、高速成膜化が困難という課題がある。この問題を解決可能な高周波プラズマＣＶＤによるダイヤモンド形成装置を提供すること。【解決手段】基板の輻射による加熱と高周波プラズマの発生に兼用される輻射加熱兼用プラズマ発生電極と、高周波電力の侵入を遮断するコイルを備えた直流電源と、直流電力の侵入を遮断するコンデンサーを備えた高周波電源と、を備え、前記輻射加熱兼用プラズマ発生電極に前記直流電源から直流電力を、前記高周波電源から高周波電力を供給することにより、原料ガスのメタンと水素をプラズマ化してダイヤモンドを形成することを特徴とする。【選択図】図１