SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

To provide a semiconductor device with improved electrical characteristics and reliability and a manufacturing method thereof.SOLUTION: A semiconductor device according to an embodiment of the present invention includes an insulating structure, a first conductive structure within the insulating structure, and a second conductive structure within the insulating structure. The width of the first conductive structure is greater than the width of the second conductive structure. The first conductive structure includes a first conductive film and a second conductive film within the first conductive film. The second conductive structure includes the first conductive film. The first conductive film of the first conductive structure, the second conductive film of the first conductive structure, and the first conductive film of the second conductive structure include the same nonmetal element.SELECTED DRAWING: Figure 1 【課題】電気的特性及び信頼度が向上された半導体装置及びその製造方法を提供する。【解決手段】本発明の一部の実施形態による半導体装置は絶縁構造体と、前記絶縁構造体内の第１導電構造体と、前記絶縁構造体内の第２導電構造体と、を含む。前記第１導電構造体の幅は前記第２導電構造体の幅より大きい。前記第１導電構造体は第１導電膜及び前記第１導電膜内の第２導電膜を含む。前記第２導電構造体は第１導電膜を含む。前記第１導電構造体の前記第１導電膜、前記第１導電構造体の前記第２導電膜及び前記第２導電構造体の前記第１導電膜は同一な非金属元素を含む。【選択図】図１