SYSTEM AND METHOD FOR SEMICONDUCTOR MEASUREMENT AND SURFACE ANALYSIS USING SECONDARY ION MASS SPECTROMETRY

SYSTEM AND METHOD FOR SEMICONDUCTOR MEASUREMENT AND SURFACE ANALYSIS USING SECONDARY ION MASS SPECTROMETRY

To provide a system and a method for semiconductor measurement and surface analysis using secondary ion mass spectrometry (SIMS).SOLUTION: A secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. A retraction lens is directed toward...

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Bibliographische Detailangaben
Hauptverfasser: BRUNO W SCHUELER, DAVID A REED, RODNEY SMEDT, BRUCE H NEWCOME, CHRIS BEVIS
Format: Patent
Sprache:eng ; jpn
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
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Beschreibung
Zusammenfassung:To provide a system and a method for semiconductor measurement and surface analysis using secondary ion mass spectrometry (SIMS).SOLUTION: A secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. A retraction lens is directed toward the sample stage. The retraction lens is configured to provide a low retraction field for secondary ions emitted from the sample on the sample stage. A magnetic sector analyzer is coupled to the retraction lens along an optical path of the SIMS system. The magnetic sector analyzer includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).SELECTED DRAWING: Figure 1 【課題】二次イオン質量分析（ＳＩＭＳ）を用いた半導体測定および表面分析のためのシステムおよび手法を提供する。【解決手段】一例では，二次イオン質量分析（ＳＩＭＳ）システムは試料ステージを含む。一次イオンビームが試料ステージに誘導される。引き込みレンズが試料ステージに向けられる。上記引き込みレンズは試料ステージ上の試料から放出される二次イオンの低引き込み場を提供するように構成される。磁気セクタ分析器がＳＩＭＳシステムの光路に沿う引き込みレンズに結合される。上記磁気セクタ分析器は磁気セクタアナライザ（ＭＳＡ）に結合された静電アナライザ（ＥＳＡ）を含む。【選択図】図１