ISOLATED STRUCTURE FOR IMPROVING IMAGE SENSOR PERFORMANCE

To provide an image sensor having a light reception element including an external isolated structure and an internal isolated structure for further enhancing a quantum efficiency of the light reception element by reducing a cross talk between the adjacent light reception elements and increasing an o...

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Bibliographische Detailangaben
Hauptverfasser: CHIANG YEN-TING, HSU TZU-HSUAN, HUNG FENGI, CHANG WEN-HAO, TING SHYH FANN, LIU JENNG, CHEN YEN-YU
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To provide an image sensor having a light reception element including an external isolated structure and an internal isolated structure for further enhancing a quantum efficiency of the light reception element by reducing a cross talk between the adjacent light reception elements and increasing an optical separation of an image sensor.SOLUTION: An image sensor includes a plurality of light reception elements 122 provided to an internal side of a substrate 104. The substrate includes a back side front surface 104b, and a front side front surface 104f opposite to the back side front surface, and an isolated structure 130 having an external isolated structure 132 and an internal isolated structure 134 is provided to the substrate, and surrounds the plurality of light reception elements in a lateral direction. The external isolated structure has a first height. The internal isolated structure has a second height that is less than the first height, and has an interval between side walls of the external isolated structure, and is provided between the adjacent light reception elements of the plurality of light reception elements. The external isolated structure and the internal isolated structure are extended toward the front side front surface from the back side front surface.SELECTED DRAWING: Figure 1 【課題】隣接した受光素子間のクロストークを低減させ、イメージセンサの光学的分離を増大させ、受光素子の量子効率を更に高める外分離構造と内分離構造とを含む受光素子を有するイメージセンサを提供する。【解決手段】基板104内に設けられた複数の受光素子122を含むイメージセンサであって、基板は、裏側表面104bと、反対の表側表面104fと、を含み、外分離構造132及び内分離構造134を有する分離構造130が基板に設けられ、複数の受光素子を横方向に囲む。外分離構造は、第1の高さを有する。内分離構造は、第1の高さ未満の第2の高さを有し、外分離構造の側壁間にて間隔が空けられており、複数の受光素子の隣接した受光素子間に設けられる。外分離構造と内分離構造は、裏側表面から表側表面へ向かいそれぞれ延伸する。【選択図】図1