POLYIMIDE PRECURSOR, HYBRID BONDING INSULATION FILM-FORMING MATERIAL, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

To provide a polyimide precursor with excellent adhesion to a substrate, a hybrid bonding insulation film-forming material, a method for producing a semiconductor device, and a semiconductor device.SOLUTION: A polyimide precursor has a structure derived from an amine compound including a siloxane bo...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	KOBAYASHI KAORI, YONEDA SATOSHI, MATSUKAWA DAISAKU, ADACHI KENYA
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	To provide a polyimide precursor with excellent adhesion to a substrate, a hybrid bonding insulation film-forming material, a method for producing a semiconductor device, and a semiconductor device.SOLUTION: A polyimide precursor has a structure derived from an amine compound including a siloxane bond.SELECTED DRAWING: None 【課題】基板に対する接着性に優れるポリイミド前駆体、ハイブリッドボンディング絶縁膜形成材料、半導体装置の製造方法、及び半導体装置を提供する。【解決手段】シロキサン結合を含むアミン化合物に由来する構造を有するポリイミド前駆体。【選択図】なし