ELECTROSTATIC CHUCK DIELECTRIC LAYER AND ELECTROSTATIC CHUCK INCLUDING THE SAME

To provide an electrostatic chuck dielectric layer and an electrostatic chuck with constant volume resistivity and to make it possible to achieve high attractive force, desorption responsiveness, and stable wafer holding over a wide range of temperatures even when used for applications where the ope...

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Bibliographische Detailangaben
Hauptverfasser: KUROKI AKIMASA, MATSUO SHIGERU, OHASHI NARIAKI, UENO SUKETSUGU
Format: Patent
Sprache:eng ; jpn
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Beschreibung
Zusammenfassung:To provide an electrostatic chuck dielectric layer and an electrostatic chuck with constant volume resistivity and to make it possible to achieve high attractive force, desorption responsiveness, and stable wafer holding over a wide range of temperatures even when used for applications where the operating temperature rises to 200°C or 300°C, to make the mechanical strength equal to or higher than the conventional electrostatic chuck dielectric layer made of aluminum oxide to facilitate manufacturing.SOLUTION: The electrostatic chuck dielectric layer has a composition in which 0.2 to 8 vol.% of a second phase composed of a tungsten carbide phase is dispersed in a first phase of an aluminum oxide phase.SELECTED DRAWING: Figure 2 【課題】使用温度が200℃や300℃まで上昇する用途に使用した際にも、一定の体積抵抗率をもつ静電チャック誘電体層や静電チャックを提供し、高い吸着力と脱着応答性、ウエハの安定保持等を幅広い温度範囲で可能とする。また、機械的強度を従来の酸化アルミニウム製の静電チャック誘電体層と同等以上とし、製造を容易にする。【解決手段】静電チャックの誘電体層を、酸化アルミニウム相の第1相中に、炭化タングステン相からなる第2相が0.2~8体積%分散した組成とする。【選択図】 図2