THERMOELECTRIC ELEMENT AND MANUFACTURING METHOD THEREOF
To provide a thermoelectric element in which a conductive layer is placed next to a thermoelectric material containing magnesium, antimony, etc., and that has sufficiently low resistance at these interfaces.SOLUTION: A thermoelectric element includes a thermoelectric material portion containing magn...
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| Zusammenfassung: | To provide a thermoelectric element in which a conductive layer is placed next to a thermoelectric material containing magnesium, antimony, etc., and that has sufficiently low resistance at these interfaces.SOLUTION: A thermoelectric element includes a thermoelectric material portion containing magnesium and antimony and/or bismuth, a conductive layer disposed adjacent to the thermoelectric material portion, containing at least one element selected from the group consisting of transition metals, zinc, aluminum, and silicon, and having a thickness of 5 μm or more and 100 μm or less.SELECTED DRAWING: Figure 1
【課題】マグネシウムやアンチモン等を含む熱電材料部の隣に導電層が配置された熱電変換素子であって、これらの界面における抵抗値が十分に低い熱電変換素子の提供を目的とする。【解決手段】当該熱電変換素子は、マグネシウム、ならびにアンチモンおよび／またはビスマスを含む熱電材料部と、前記熱電材料部に隣接して配置された、遷移金属、亜鉛、アルミニウム、およびシリコンからなる群から選ばれる少なくとも一種の元素を含み、かつ厚みが５μｍ以上１００μｍ以下である導電層と、を有する。【選択図】図１ |
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