METHOD AND APPARATUS FOR GROWING OXIDE SINGLE CRYSTAL

To provide an apparatus and method for growing a single crystal, using an oxide crucible formed of the same material as a raw material melt.SOLUTION: An apparatus for growing a single crystal includes: an apparatus body 10 including a cylindrical heat chamber 1, an oxide crucible 2 provided in the h...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	TAKATSUKA YUJI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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