METHOD AND APPARATUS FOR GROWING OXIDE SINGLE CRYSTAL

To provide an apparatus and method for growing a single crystal, using an oxide crucible formed of the same material as a raw material melt.SOLUTION: An apparatus for growing a single crystal includes: an apparatus body 10 including a cylindrical heat chamber 1, an oxide crucible 2 provided in the heat chamber, a high frequency induction coil 3 provided in the periphery of a side wall of the heat chamber and a cylindrical metal heater 5 built in the oxide crucible and induction-heated by the coil; and first, second and third polymerization chambers 20, 30 and 40 provided above the apparatus body, having the lower end side opening parts superimposed on the upper end side opening part of the heat chamber and moved by transfer means in the chamber. Openings 22 and 42 for crystal pulling shafts 21 and 41 and crystal storage parts 23 and 43 are provided in the first and third polymerization chambers; the second polymerization chamber includes raw material supply means 31; the upper end side opening part of the heat chamber and each lower end side opening part of the first, second and third polymerization chambers include partition plates 6, 24, 32 and 44 attachably/detachably provided; and a crystal can be taken from the oxide crucible without lowering a crucible temperature, and a crystal raw material can be added.SELECTED DRAWING: Figure 1 【課題】原料融液と同材質の酸化物坩堝を用いた単結晶の育成装置と育成法を提供する。【解決手段】円筒状加熱室1、加熱室に設けられた酸化物坩堝2、加熱室の側壁周囲に設けられた高周波誘導コイル3、酸化物坩堝に組み込まれかつ上記コイルで誘導加熱される円筒状金属ヒータ5を有する装置本体10と、装置本体上方に設けられ加熱室の上端側開放部に重ね合わされる下端側開放部を有しかつ移動手段により移動可能な第一重合室20、第二重合室30、第三重合室40をチャンバー内に備え、第一重合室と第三重合室には結晶引き上げ軸21、41用開口22、42と結晶収容部23、43が設けられ、第二重合室には原料供給手段31が設けられ、加熱室の上端側開放部と第一重合室、第二重合室、第三重合室の各下端側開放部には仕切り板6、24、32、44が着脱自在に付設されたことを特徴とし、坩堝温度を下げずに酸化物坩堝から結晶を取り出せると共に結晶原料を追加できる。【選択図】図１