CONNECTION STRUCTURE AND MANUFACTURING METHOD THEREOF

To prevent initial conduction reliability from being reduced and also suppress occurrence of short-circuiting even in a case where conductive particles of which the average particle diameter is smaller than 3 μm are used for an application to high-density mounting regarding a connection structure in which a first electronic component and a second electronic component are connected via an insulation adhesive and the conductive particles disposed between an electrode of the first electronic component and an electrode of the second electronic component.SOLUTION: A connection structure, in which a first electronic component and a second electronic component are connected via conductive particles and an insulation adhesive disposed between an electrode of the first electronic component and an electrode of the second electronic component, uses conductive particles of which the average particle diameter is smaller than 3 μm and the compression hardness (K value) under 20% deformation is 1500 N/mm2 or more and 8000 N/mm2 or less.SELECTED DRAWING: Figure 1 【課題】第１電子部品の電極と第２電子部品の電極との間に配置された絶縁性接着剤及び導電粒子を介して、当該第１電子部品と第２電子部品とが接続されている接続構造体について、高密度実装に適用するために、導電粒子として、平均粒子径が３μｍ未満のものを使用した場合であっても、初期導通信頼性を低下させず、ショートの発生も抑制する。【解決手段】第１電子部品の電極と第２電子部品の電極との間に配置された導電粒子及び絶縁性接着剤を介して、当該第１電子部品と第２電子部品とが接続されている接続構造体は、導電粒子として平均粒子径が３μｍ未満であって、２０％変形時の圧縮硬さ（Ｋ値）が１５００Ｎ／ｍｍ２以上８０００Ｎ／ｍｍ２以下あるものを使用する。【選択図】図１