TARGET TRAY, SPUTTER FILM DEPOSITION APPARATUS, AND METHOD FOR DEPOSITING FILM

To provide film deposition with high reproducibility on a sputter film deposition apparatus using a liquid metal gallium as a target.SOLUTION: A film deposition apparatus for performing sputtering using a liquid metal gallium as a target includes: a target installation part to which a target tray fo...

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Bibliographische Detailangaben
Hauptverfasser:	FUJII TAKAMITSU, HONMA YASUYUKI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	To provide film deposition with high reproducibility on a sputter film deposition apparatus using a liquid metal gallium as a target.SOLUTION: A film deposition apparatus for performing sputtering using a liquid metal gallium as a target includes: a target installation part to which a target tray for storing a liquid metal gallium is installed; and a temperature holding mechanism for keeping the liquid metal gallium at 30°C or higher.SELECTED DRAWING: Figure 1 【課題】液体金属ガリウムをターゲットとして用いたスパッタ成膜において、再現性の高い成膜を実現する。【解決手段】液体金属ガリウムをターゲットとして用いてスパッタを行う成膜装置において、液体金属ガリウムを収容するターゲットトレイを設置するターゲット設置部と、液体金属ガリウムを３０℃以上に保持する温度保持機構と、を備える。【選択図】図１