COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERN FORMATION METHOD

To provide a silicon-containing metal hard mask forming composition that has a high super fine pattern collapse prevention effect in a multilayer resist method, can form a resist pattern excellent in LWR, and has excellent dry-etching resistance and wet detachability to a conventional silicon-contai...

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Hauptverfasser: TAKIZAWA KANATA, KOBAYASHI NAOKI, YANO TOSHIHARU, MITSUI RYO
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To provide a silicon-containing metal hard mask forming composition that has a high super fine pattern collapse prevention effect in a multilayer resist method, can form a resist pattern excellent in LWR, and has excellent dry-etching resistance and wet detachability to a conventional silicon-containing under layer film material, and has an embedding characteristics excellent to a conventional metal hard mask material.SOLUTION: A composition for forming a silicon-containing metal hard mask contains (A) metal oxide nanoparticles, (B) thermally crosslinkable polysiloxane (Sx) that does not contain an organic group including an aromatic ring, and (C) a solvent.SELECTED DRAWING: Figure 1 【課題】多層レジスト法において超微細パターンの倒れ抑止効果が高く、LWRに優れたレジストパターンを形成可能であり、かつ従来のケイ素含有下層膜材料に対して優れたドライエッチング耐性と湿式剥離性を有するとともに、従来のメタルハードマスク材料に対して優れた埋め込み特性を併せ持つケイ素含有メタルハードマスク形成用組成物を提供する。【解決手段】(A)金属酸化物ナノ粒子と、(B)芳香環を含む有機基を含まない熱架橋性ポリシロキサン(Sx)と、(C)溶媒を含むものであることを特徴とするケイ素含有メタルハードマスク形成用組成物。【選択図】図1