SEMICONDUCTOR LIGHT EMITTING DEVICE, BASE, SOLDERED BASE, AND MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT EMITTING DEVICE
To provide a semiconductor light emitting device and the like that can suppress liquid solder from protruding from the longitudinal side surfaces of a semiconductor laser bar.SOLUTION: A semiconductor light emitting device includes a base 2 having a wiring member 10, a semiconductor laser bar 3, and...
Gespeichert in:
Hauptverfasser: | , , , , |
---|---|
Format: | Patent |
Sprache: | eng ; jpn |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | To provide a semiconductor light emitting device and the like that can suppress liquid solder from protruding from the longitudinal side surfaces of a semiconductor laser bar.SOLUTION: A semiconductor light emitting device includes a base 2 having a wiring member 10, a semiconductor laser bar 3, and a solder 4 placed between the wiring member 10 and the semiconductor laser bar 3. The surface of the wiring member 10 on the semiconductor laser bar 3 side includes a connection region 10a that is an interface with the solder 4, and a block region 10b whose contact angle with respect to the solder 4 is larger than 90 degrees. The connection region 10a is located inside a side surface S3 of the semiconductor laser bar 3 in the longitudinal direction in a top view. At least a part of the block region 10b is located between the connection region 10a and the side surface S3 in the top view. The inner part of the block region 10b in the longitudinal direction is located inside the side surface S3. The solder 4 includes a rear side extending portion 4a extending outward from a rear end surface S2 in the top view, and does not extend outward from the pair of side surfaces S3.SELECTED DRAWING: Figure 1
【課題】液状の半田が半導体レーザバーの長手方向の側面からはみ出すことを抑制できる半導体発光装置等を提供する。【解決手段】配線部材10を有する基台2と、半導体レーザバー3と、配線部材10と半導体レーザバー3との間に配置された半田4と、を備え、配線部材10の半導体レーザバー3側の面には、半田4との界面である接続領域10aと、半田4に対する接触角が90度より大きいブロック領域10bとが含まれ、接続領域10aは、上面視において、長手方向における半導体レーザバー3の側面S3の内側に位置し、ブロック領域10bの少なくとも一部は、上面視において、接続領域10aと側面S3との間に位置し、長手方向におけるブロック領域10bの内側部分は、側面S3よりも内側に位置し、半田4は、上面視においてリア端面S2から外側に延伸するリア側延伸部4aを有し、かつ、一対の側面S3から外側には延伸していない。【選択図】図1 |
---|