POLISHING LIQUID COMPOSITION FOR SILICON OXIDE FILMS

To provide a polishing liquid composition for silicon oxide films that improves the polishing rate of projections on the surface irregularities of a silicon oxide film while suppressing the polishing rate of the recesses.SOLUTION: A polishing liquid composition for silicon oxide films according to o...

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Bibliographische Detailangaben
Hauptverfasser:	YAMAGUCHI TETSUSHI, INOUE MASAKI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES
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Beschreibung
Zusammenfassung:	To provide a polishing liquid composition for silicon oxide films that improves the polishing rate of projections on the surface irregularities of a silicon oxide film while suppressing the polishing rate of the recesses.SOLUTION: A polishing liquid composition for silicon oxide films according to one embodiment includes: (component A) cerium oxide particles; (component B) a nitrogen-containing heterocyclic aromatic compound with at least one hydrogen atom in a nitrogen-containing heteroaromatic ring being substituted with a hydroxy group; (component C) a compound represented by the following formula (I) or (II); and an aqueous medium.SELECTED DRAWING: None 【課題】一態様において、酸化珪素膜の表面凹凸における凸部の研磨速度向上と凹部の研磨速度抑制とを両立できる酸化珪素膜用研磨液組成物を提供する。【解決手段】本開示は、一態様において、酸化セリウム粒子（成分Ａ）と、含窒素複素芳香環の少なくとも１つの水素原子がヒドロキシル基で置換された窒素含有複素芳香族化合物（成分Ｂ）と、下記式（Ｉ）又は式（ＩＩ）で表される化合物（成分Ｃ）と、水系媒体と、を含有する、酸化珪素膜用研磨液組成物に関する。TIFF2023142078000005.tif41170【選択図】なし