INSULATION FILM FORMATION MATERIAL, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
To provide an insulation film formation material which is excellent in heat resistance and mechanical characteristics, and enables formation of an insulation film that can suppress a joint failure between an insulation film and an electrode or a joint failure between the insulation films in hybrid b...
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Format: | Patent |
Sprache: | eng ; jpn |
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Zusammenfassung: | To provide an insulation film formation material which is excellent in heat resistance and mechanical characteristics, and enables formation of an insulation film that can suppress a joint failure between an insulation film and an electrode or a joint failure between the insulation films in hybrid bonding.SOLUTION: An insulation film formation material for forming an insulation film by hybrid bonding contains at least one of (A) a polyimide precursor which is at least one resin selected from the group consisting of a polyamic acid, polyamic acid ester, polyamic acid salt and polyamic acid amide, and a polyimide resin, where the total percentage content of the polyimide precursor and the polyimide resin is 50 mass% or more with respect to the total amount of a resin component.SELECTED DRAWING: None
【課題】耐熱性及び機械特性に優れ、かつハイブリッドボンディングを行う際に絶縁膜と電極との接合不良又は絶縁膜同士の接合不良を抑制できる絶縁膜を形成可能な絶縁膜形成材料を提供する。【解決手段】(A)ポリアミド酸、ポリアミド酸エステル、ポリアミド酸塩及びポリアミド酸アミドからなる群より選択される少なくとも1種の樹脂であるポリイミド前駆体、並びにポリイミド樹脂の少なくとも一方を含み、前記ポリイミド前駆体及び前記ポリイミド樹脂の合計含有率は、樹脂成分全量に対して50質量%以上である、ハイブリッドボンディングにより絶縁膜を形成するための絶縁膜形成材料。【選択図】なし |
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