APPARATUS AND METHOD FOR GROWING OXIDE SINGLE CRYSTAL

To provide an apparatus and a method for growing an oxide single crystal, using an oxide crucible formed of the same material as a raw material melt as storing and holding means of the raw material melt.SOLUTION: An apparatus for growing an oxide single crystal includes: an oxide crucible 1 constitu...

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1. Verfasser: TAKATSUKA YUJI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To provide an apparatus and a method for growing an oxide single crystal, using an oxide crucible formed of the same material as a raw material melt as storing and holding means of the raw material melt.SOLUTION: An apparatus for growing an oxide single crystal includes: an oxide crucible 1 constituted of an oxide crystal material and capable of storing and holding a raw material melt 10; a high frequency induction coil 2 provided around a side wall of the oxide crucible; and a cylindrical metal heater 3 built in the oxide crucible, inductively heated by the coil and including an upper end part 3b held by fixing means provided above the oxide crucible and a lower end part 3a arranged to be separated upward from an inner bottom surface 1a of the oxide crucible. A lower end part 2a of the high frequency induction coil is arranged below from the lower end part 3a of the cylindrical metal heater, and prevention of the oxide crucible and cylindrical metal heater from deforming has an effect capable of repeatedly and stably an oxide single crystal having same quality and a long size.SELECTED DRAWING: Figure 1 【課題】原料融液の貯留保持手段として原料融液と同材質の酸化物坩堝を用いた酸化物単結晶の育成装置と育成方法を提供する。【解決手段】酸化物結晶材料で構成されかつ原料融液10を貯留保持可能な酸化物坩堝1と、酸化物坩堝の側壁周囲に設けられる高周波誘導コイル2と、酸化物坩堝内に組み込まれ、高周波誘導コイルにより誘導加熱されると共に、酸化物坩堝上方に設けられた固定手段により上端部3bが保持されかつ下端部3aが酸化物坩堝の内側底面1aから上方へ離れて配置される円筒状金属ヒータ3とを備え、高周波誘導コイルの下端部2aが円筒状金属ヒータの下端部3aより下側に配置されることを特徴とし、酸化物坩堝と円筒状金属ヒータの変形が抑制されるため同品質でかつ長さ寸法の大きい酸化物単結晶を繰り返し安定して育成できる効果を有する。【選択図】図1