SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM

To provide technique enabling formation of a protective film that has high barrier properties to oxidized gas and is easy to remove.SOLUTION: A substrate processing method has the steps of: preparing a substrate with a target film exposed on the surface; supplying the surface of the substrate with a...

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Bibliographische Detailangaben
Hauptverfasser: ASAKO RYUICHI, IWASHITA MITSUAKI, UEDA HIROICHI
Format: Patent
Sprache:eng ; jpn
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Beschreibung
Zusammenfassung:To provide technique enabling formation of a protective film that has high barrier properties to oxidized gas and is easy to remove.SOLUTION: A substrate processing method has the steps of: preparing a substrate with a target film exposed on the surface; supplying the surface of the substrate with an ionic liquid including oxoacid structure having a carbon number of 6 or more at a first temperature to form a liquid film on the surface of the target film; cooling the substrate to a second temperature lower than the first temperature to solidify the liquid film to form a solid film; and supplying the substrate with a polar solvent to remove the solid film.SELECTED DRAWING: Figure 1 【課題】酸化性ガスの遮断性が高くかつ除去しやすい保護膜を形成できる技術を提供する。【解決手段】本開示の一態様による基板処理方法は、表面に対象膜が露出した基板を準備する工程と、前記基板の表面に、炭素数が6以上のオキソ酸構造を含むイオン液体を第1温度で供給し、前記対象膜の表面に液膜を形成する工程と、前記基板を前記第1温度より低い第2温度に冷却し、前記液膜を凝固させて固体膜を形成する工程と、前記基板に極性溶媒を供給し、前記固体膜を除去する工程と、を有する。【選択図】図1