SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

To provide a semiconductor device capable of suppressing occurrence of a crack in an insulation film, and a method for manufacturing the same.SOLUTION: According to an embodiment, a semiconductor device comprises a substrate, a first film including a plurality of electrode layers alternately provided on the substrate and a plurality of insulation layers, and a plurality of insulation films provided in the first film, extending along a first direction parallel to a surface of the substrate, and arranged along a second direction parallel to the surface of the substrate and crossing the first direction. In addition, the semiconductor device comprises a semiconductor layer provided in any of the plurality of insulation films, and a first and a second charge storage units provided between one electrode layer and the semiconductor layer so as to sandwich the semiconductor layer. Furthermore, the plurality of insulation films include a first insulation film having a first width in the second direction, and a second insulation film having a second width wider than the first width in the second direction.SELECTED DRAWING: Figure 7 【課題】絶縁膜内にクラックが発生することを抑制可能な半導体装置およびその製造方法を提供する。【解決手段】一の実施形態によれば、半導体装置は、基板と、前記基板上に交互に設けられた複数の電極層および複数の絶縁層を含む第１膜と、前記第１膜内に設けられ、前記基板の表面に平行な第１方向に沿って延びており、前記基板の表面に平行でかつ前記第１方向と交差する第２方向に沿って配列された複数の絶縁膜とを備える。前記装置はさらに、前記複数の絶縁膜のうちのいずれかの絶縁膜内に設けられた半導体層と、前記電極層の１つと前記半導体層との間で前記半導体層を挟むように設けられた第１および第２電荷蓄積部とを備える。さらに、前記複数の絶縁膜は、前記第２方向における第１幅を有する第１絶縁膜と、前記第１幅より広い前記第２方向における第２幅を有する第２絶縁膜とを含む。【選択図】図７