SEMICONDUCTOR DEVICE

To provide a semiconductor device enabling the breakdown voltage of the termination region and the snapback characteristic be controlled.SOLUTION: A semiconductor device comprises a semiconductor part, a first electrode, a first control electrode, at least one second control electrode, and a control pad. The semiconductor part has an active region and a termination region. The first electrode is provided on a surface of the semiconductor part and located on the active region. The first control electrode is provided in the active region of the semiconductor part, facing the semiconductor part via a first insulating film. The second control electrode is provided on the termination region of the semiconductor part via a second insulating film and arranged to surround the first electrode. The control pad is provided separated from the first electrode on the surface of the semiconductor part, and electrically connected to the second control electrode. The semiconductor part includes a first semiconductor layer extending from the active region to the termination region. The second control electrode faces a part of the first semiconductor layer via the second insulating film.SELECTED DRAWING: Figure 1 【課題】終端領域の降伏電圧およびスナップバック特性を制御できる半導体装置を提供する。【解決手段】半導体装置は、半導体部と、第１電極と、第１制御電極と、少なくとも１つの第２制御電極と、制御パッドと、を備える。前記半導体部は、活性領域と終端領域とを有する。前記第１電極は、前記半導体部の前記表面上に設けられ、前記活性領域上に位置する。前記第１制御電極は、前記半導体部の前記活性領域に設けられ、前記半導体部に第１絶縁膜を介して向き合う。前記第２制御電極は、前記半導体部の前記終端領域上に第２絶縁膜を介して設けられ、前記第１電極を囲むように配置される。前記制御パッドは、前記半導体部の前記表面上において前記第１電極から離間して設けられ、前記第２制御電極に電気的に接続される。前記半導体部は、記活性領域から前記終端領域へ延在する第１半導体層を含み、前記第２制御電極は、前記第１半導体層の一部に前記第２絶縁膜を介して向き合う。【選択図】図１