PLASMA POTENTIAL MEASURING DEVICE, AND PLASMA POTENTIAL MEASURING METHOD

To provide a plasma potential measuring device capable of precisely detecting the state of plasma generated by plasma processing equipment.SOLUTION: The plasma potential measuring device includes: a detection electrode 162b that is placed facing plasma P generated in a chamber for inducing a charge...

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Bibliographische Detailangaben
1. Verfasser:	SHIROMIZU HIROSHI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	To provide a plasma potential measuring device capable of precisely detecting the state of plasma generated by plasma processing equipment.SOLUTION: The plasma potential measuring device includes: a detection electrode 162b that is placed facing plasma P generated in a chamber for inducing a charge corresponding to the plasma potential; a first electrode 162c on the opposite side from plasma P facing detection electrode 162b; and a first insulating member 162a interposed between the detection electrode 162b and the first electrode 162c. The first electrode 162c is virtually shorted to the detection electrode 162b.SELECTED DRAWING: Figure 4 【課題】プラズマ処理装置において生成されるプラズマの状態を高精度に検出する。【解決手段】プラズマ電位測定装置は、チャンバ内に生成されるプラズマＰと対向して配置され、プラズマの電位に対応する電荷が誘起される検出電極１６２ｂと、プラズマＰと反対側で、検出電極１６２ｂと対向する第１の電極１６２ｃと、検出電極１６２ｂと第１の電極１６２ｃとの間に介在する第１絶縁部材１６２ａと、を備える。第１の電極１６２ｃは、検出電極１６２ｂと仮想短絡されている。【選択図】図４