SEMICONDUCTOR DEVICE

To provide a semiconductor device improved in switching characteristics.SOLUTION: A semiconductor device includes a first electrode, a second electrode, a semiconductor part, a conductive body, and a control electrode. The second electrode is provided apart from the first electrode in a first direction. The semiconductor part includes a first semiconductor layer of a first conductivity type, and a second semiconductor layer of a second conductivity type which is provided on the first semiconductor layer, the semiconductor part being located between the first electrode and the second electrode. The conductive body is provided within the semiconductor part, electrically insulated by a first insulating film from the semiconductor part, and facing the first semiconductor layer via the first insulating film. The control electrode includes a first portion provided between the second semiconductor layer and the first electrode via a second insulating film, and a second portion facing the second semiconductor layer via the second insulating film in a second direction orthogonal to the first direction, the first portion and the second portion being connected to each other and apart from the conductive body.SELECTED DRAWING: Figure 1 【課題】スイッチング特性を向上させた半導体装置を提供する。【解決手段】半導体装置は、第１電極と、第２電極と、半導体部と、導電体と、制御電極と、を備える。前記第２電極は、第１方向において、前記第１電極と離間して設けられる。前記半導体部は、第１導電形の第１半導体層と、前記第１半導体層上に設けられた第２導電形の第２半導体層と、を含み、且つ、前記第１電極と前記第２電極との間に位置する。前記導電体は、前記半導体部内に設けられ、前記半導体部から第１絶縁膜により電気的に絶縁され、前記第１絶縁膜を介して、前記第１半導体層に向き合う。前記制御電極は、前記第２半導体層と前記第１電極との間に第２絶縁膜を介して設けられた第１部分と、前記第１方向と直交する第２方向において、前記第２半導体層と前記第２絶縁膜を介して向き合う第２部分と、を有し、前記第１部分と前記第２部分は繋がっており、且つ、前記導電体と離間する。【選択図】図１