COMPOSITE STRUCTURE AND SEMICONDUCTOR MANUFACTURING EQUIPMENT WITH COMPOSITE STRUCTURE

To provide a component for semiconductor manufacturing equipment and semiconductor manufacturing equipment with improved low-particle generation.SOLUTION: A composite structure 10 with improved low-particle generation and preferably used as a component for semiconductor manufacturing equipment, comp...

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Bibliographische Detailangaben
Hauptverfasser: ASHIZAWA HIROAKI, SUNABA YUKI, TAKIZAWA AKIHITO
Format: Patent
Sprache:eng ; jpn
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Beschreibung
Zusammenfassung:To provide a component for semiconductor manufacturing equipment and semiconductor manufacturing equipment with improved low-particle generation.SOLUTION: A composite structure 10 with improved low-particle generation and preferably used as a component for semiconductor manufacturing equipment, comprises a base material 15 and a structure 20 provided on the base material and having a surface 20a exposed to a plasma atmosphere, and the structure contains Y2SiO5 crystals as a major component, and the lattice constants of the crystals satisfy at least one of the following: a>9.06, b>6.93, c>6.70.SELECTED DRAWING: Figure 1 【課題】耐パーティクル性(low-particle generation)を高める半導体製造装置用部材及び半導体製造装置を提供する。【解決手段】耐パーティクル性に優れ、半導体製造装置用部材として好ましく用いられる複合構造物10であって、基材15と、基材上に設けられ、プラズマ雰囲気に曝露される表面20aを有する構造物20と、を備え、構造物がY2SiO5結晶を主成分として含み、かつ、当該結晶の格子定数が、a>9.06、b>6.93、c>6.70の少なくとも1つを満たす。【選択図】図1