COMPOSITE STRUCTURE AND SEMICONDUCTOR MANUFACTURING EQUIPMENT WITH COMPOSITE STRUCTURE

To provide a component for semiconductor manufacturing equipment and semiconductor manufacturing equipment with improved low-particle generation.SOLUTION: A composite structure 10 with improved low-particle generation and preferably used as a component for semiconductor manufacturing equipment, comp...

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Bibliographische Detailangaben
Hauptverfasser:	ASHIZAWA HIROAKI, TAKIZAWA AKIHITO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	To provide a component for semiconductor manufacturing equipment and semiconductor manufacturing equipment with improved low-particle generation.SOLUTION: A composite structure 10 with improved low-particle generation and preferably used as a component for semiconductor manufacturing equipment, comprises a base material 15 and a structure 20 provided on the base material and having a surface 20a exposed to a plasma atmosphere, and the structure contains Y2O3-ZrO2 solid solution (YZrO) as a main component and its indentation hardness is greater than 12 GPa.SELECTED DRAWING: Figure 1 【課題】耐パーティクル性（ｌｏｗ－ｐａｒｔｉｃｌｅｇｅｎｅｒａｔｉｏｎ）を高める半導体製造装置用部材及び半導体製造装置を提供する。【解決手段】耐パーティクル性に優れ、半導体製造装置用部材として好ましく用いられる複合構造物１０であって、基材１５と、基材上に設けられ、プラズマ雰囲気に曝露される表面２０ａを有する構造物２０とを、備え、構造物がＹ２Ｏ３－ＺｒＯ２固溶体（ＹＺｒＯ）を主成分として含み、かつ、そのインデンテーション硬度が１２ＧＰａより大である。【選択図】図１