SEMICONDUCTOR DEVICE
To provide a semiconductor device which suppresses wire flow and can suppress increase in physical size.SOLUTION: A sealing body 30 is a resin molding, and seals a semiconductor element 40L, at least a part of a substrate 50, a part of a signal terminal 93L, a bonding wire 110, and a relay substrate...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; jpn |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | NAKAMURA TOSHIHIRO OKUMURA TOMOMI KUSAMA HIROTOSHI SHIMOTSUMA AYAKO MIZUNO NAOHITO |
| description | To provide a semiconductor device which suppresses wire flow and can suppress increase in physical size.SOLUTION: A sealing body 30 is a resin molding, and seals a semiconductor element 40L, at least a part of a substrate 50, a part of a signal terminal 93L, a bonding wire 110, and a relay substrate 150L. The bonding wire 110 electrically connects a pad 40P of the semiconductor element 40L, and a land 152a of the relay substrate 150L. Out of a surface metal body 52 of the substrate 50, the semiconductor element 40L is arranged in relay wiring 55 as a wiring part, and the relay substrate 150L is arranged in an island 58L electrically separated from the wiring part.SELECTED DRAWING: Figure 125
【課題】ワイヤ流れを抑制し、体格の増大を抑制できる半導体装置を提供すること【解決手段】封止体３０は樹脂成形体であり、半導体素子４０Ｌ、基板５０の少なくとも一部、信号端子９３Ｌの一部、ボンディングワイヤ１１０、中継基板１５０Ｌを封止している。ボンディングワイヤ１１０は、半導体素子４０Ｌのパッド４０Ｐと中継基板１５０Ｌのランド１５２ａとを電気的に接続している。基板５０の表面金属体５２のうち、配線部である中継配線５５に半導体素子４０Ｌが配置され、配線部とは電気的分離されたアイランド５８Ｌに中継基板１５０Ｌが配置されている。【選択図】図１２５ |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2023122391A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2023122391A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2023122391A3</originalsourceid><addsrcrecordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGRsaGRkbGloaOxkQpAgC8GR8Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>NAKAMURA TOSHIHIRO ; OKUMURA TOMOMI ; KUSAMA HIROTOSHI ; SHIMOTSUMA AYAKO ; MIZUNO NAOHITO</creator><creatorcontrib>NAKAMURA TOSHIHIRO ; OKUMURA TOMOMI ; KUSAMA HIROTOSHI ; SHIMOTSUMA AYAKO ; MIZUNO NAOHITO</creatorcontrib><description>To provide a semiconductor device which suppresses wire flow and can suppress increase in physical size.SOLUTION: A sealing body 30 is a resin molding, and seals a semiconductor element 40L, at least a part of a substrate 50, a part of a signal terminal 93L, a bonding wire 110, and a relay substrate 150L. The bonding wire 110 electrically connects a pad 40P of the semiconductor element 40L, and a land 152a of the relay substrate 150L. Out of a surface metal body 52 of the substrate 50, the semiconductor element 40L is arranged in relay wiring 55 as a wiring part, and the relay substrate 150L is arranged in an island 58L electrically separated from the wiring part.SELECTED DRAWING: Figure 125
【課題】ワイヤ流れを抑制し、体格の増大を抑制できる半導体装置を提供すること【解決手段】封止体３０は樹脂成形体であり、半導体素子４０Ｌ、基板５０の少なくとも一部、信号端子９３Ｌの一部、ボンディングワイヤ１１０、中継基板１５０Ｌを封止している。ボンディングワイヤ１１０は、半導体素子４０Ｌのパッド４０Ｐと中継基板１５０Ｌのランド１５２ａとを電気的に接続している。基板５０の表面金属体５２のうち、配線部である中継配線５５に半導体素子４０Ｌが配置され、配線部とは電気的分離されたアイランド５８Ｌに中継基板１５０Ｌが配置されている。【選択図】図１２５</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230901&DB=EPODOC&CC=JP&NR=2023122391A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230901&DB=EPODOC&CC=JP&NR=2023122391A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NAKAMURA TOSHIHIRO</creatorcontrib><creatorcontrib>OKUMURA TOMOMI</creatorcontrib><creatorcontrib>KUSAMA HIROTOSHI</creatorcontrib><creatorcontrib>SHIMOTSUMA AYAKO</creatorcontrib><creatorcontrib>MIZUNO NAOHITO</creatorcontrib><title>SEMICONDUCTOR DEVICE</title><description>To provide a semiconductor device which suppresses wire flow and can suppress increase in physical size.SOLUTION: A sealing body 30 is a resin molding, and seals a semiconductor element 40L, at least a part of a substrate 50, a part of a signal terminal 93L, a bonding wire 110, and a relay substrate 150L. The bonding wire 110 electrically connects a pad 40P of the semiconductor element 40L, and a land 152a of the relay substrate 150L. Out of a surface metal body 52 of the substrate 50, the semiconductor element 40L is arranged in relay wiring 55 as a wiring part, and the relay substrate 150L is arranged in an island 58L electrically separated from the wiring part.SELECTED DRAWING: Figure 125
【課題】ワイヤ流れを抑制し、体格の増大を抑制できる半導体装置を提供すること【解決手段】封止体３０は樹脂成形体であり、半導体素子４０Ｌ、基板５０の少なくとも一部、信号端子９３Ｌの一部、ボンディングワイヤ１１０、中継基板１５０Ｌを封止している。ボンディングワイヤ１１０は、半導体素子４０Ｌのパッド４０Ｐと中継基板１５０Ｌのランド１５２ａとを電気的に接続している。基板５０の表面金属体５２のうち、配線部である中継配線５５に半導体素子４０Ｌが配置され、配線部とは電気的分離されたアイランド５８Ｌに中継基板１５０Ｌが配置されている。【選択図】図１２５</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGRsaGRkbGloaOxkQpAgC8GR8Q</recordid><startdate>20230901</startdate><enddate>20230901</enddate><creator>NAKAMURA TOSHIHIRO</creator><creator>OKUMURA TOMOMI</creator><creator>KUSAMA HIROTOSHI</creator><creator>SHIMOTSUMA AYAKO</creator><creator>MIZUNO NAOHITO</creator><scope>EVB</scope></search><sort><creationdate>20230901</creationdate><title>SEMICONDUCTOR DEVICE</title><author>NAKAMURA TOSHIHIRO ; OKUMURA TOMOMI ; KUSAMA HIROTOSHI ; SHIMOTSUMA AYAKO ; MIZUNO NAOHITO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2023122391A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>NAKAMURA TOSHIHIRO</creatorcontrib><creatorcontrib>OKUMURA TOMOMI</creatorcontrib><creatorcontrib>KUSAMA HIROTOSHI</creatorcontrib><creatorcontrib>SHIMOTSUMA AYAKO</creatorcontrib><creatorcontrib>MIZUNO NAOHITO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NAKAMURA TOSHIHIRO</au><au>OKUMURA TOMOMI</au><au>KUSAMA HIROTOSHI</au><au>SHIMOTSUMA AYAKO</au><au>MIZUNO NAOHITO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE</title><date>2023-09-01</date><risdate>2023</risdate><abstract>To provide a semiconductor device which suppresses wire flow and can suppress increase in physical size.SOLUTION: A sealing body 30 is a resin molding, and seals a semiconductor element 40L, at least a part of a substrate 50, a part of a signal terminal 93L, a bonding wire 110, and a relay substrate 150L. The bonding wire 110 electrically connects a pad 40P of the semiconductor element 40L, and a land 152a of the relay substrate 150L. Out of a surface metal body 52 of the substrate 50, the semiconductor element 40L is arranged in relay wiring 55 as a wiring part, and the relay substrate 150L is arranged in an island 58L electrically separated from the wiring part.SELECTED DRAWING: Figure 125
【課題】ワイヤ流れを抑制し、体格の増大を抑制できる半導体装置を提供すること【解決手段】封止体３０は樹脂成形体であり、半導体素子４０Ｌ、基板５０の少なくとも一部、信号端子９３Ｌの一部、ボンディングワイヤ１１０、中継基板１５０Ｌを封止している。ボンディングワイヤ１１０は、半導体素子４０Ｌのパッド４０Ｐと中継基板１５０Ｌのランド１５２ａとを電気的に接続している。基板５０の表面金属体５２のうち、配線部である中継配線５５に半導体素子４０Ｌが配置され、配線部とは電気的分離されたアイランド５８Ｌに中継基板１５０Ｌが配置されている。【選択図】図１２５</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; jpn |
| recordid | cdi_epo_espacenet_JP2023122391A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR DEVICE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T02%3A42%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=NAKAMURA%20TOSHIHIRO&rft.date=2023-09-01&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2023122391A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |