PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS

To provide photoresist compositions and pattern formation methods.SOLUTION: A photoresist composition comprises: a first polymer formed by free radical polymerization, the first polymer comprising polymerized units formed from a monomer comprising an ethylenically unsaturated double bond and an acid...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	JASON A DESISTO, THOMAS MARANGONI, LI MINGQI, LIU CONG, THOMAS CARDOLACCIA, LEE CHOONG-BONG, WU CHUNYI, GREGORY P PROKOPOWICZ
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	To provide photoresist compositions and pattern formation methods.SOLUTION: A photoresist composition comprises: a first polymer formed by free radical polymerization, the first polymer comprising polymerized units formed from a monomer comprising an ethylenically unsaturated double bond and an acid-labile group; a photoacid generator; a quencher which has a specific structure and is free of crosslinkable groups; and a solvent.SELECTED DRAWING: None 【課題】フォトレジスト組成物及びパターン形成方法を提供する。【解決手段】エチレン性不飽和二重結合と、酸に不安定な基とを含むモノマーから形成された重合単位を含む、フリーラジカル重合によって形成された第１のポリマーと、光酸発生剤と、特定構造を有する消光剤であって、架橋可能な基を含まない消光剤と、溶剤を含有することを特徴とするフォトレジスト組成物。【選択図】なし