SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
To reduce internal concentration due to temperature changes.SOLUTION: A sealing member 21 is filled into a storage area 16 g and includes a contact area 21a on its side that contacts an upper inner wall 16c to seal the semiconductor chip. In this case, a position of the contact area 21a of the seali...
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Zusammenfassung: | To reduce internal concentration due to temperature changes.SOLUTION: A sealing member 21 is filled into a storage area 16 g and includes a contact area 21a on its side that contacts an upper inner wall 16c to seal the semiconductor chip. In this case, a position of the contact area 21a of the sealing member 21 is closer to a semiconductor chip than the sealing surface 21b of the sealing member 21. In other words, a space 22 is formed between a sealing connection surface 21c of a corner of the sealing member 21 and a mounting area 16c2 of the upper inner wall 16c of a frame section 16. Thus, even if linear expansion coefficients of the sealing member 21 and the frame section 16 are different, stress concentration is suppressed because there are no sharp corners on an outer edge of the sealing member 21.SELECTED DRAWING: Figure 4
【課題】温度変化に伴う内部の集中を低減することができる。【解決手段】封止部材21は、収納領域16gに充填され、上部内壁16cに接触する接触領域21aを側面に含み、半導体チップを封止する。この際、封止部材21の接触領域21aの位置が封止部材21の封止面21bよりも半導体チップに近い。すなわち、封止部材21の角部の封止接続面21cと枠部16の上部内壁16cの取り付け領域16c2との間に空間22が形成されている。このように封止部材21と枠部16との線膨張係数が異なっていても、封止部材21の外縁部に尖った角部がないため、応力の集中が抑制される。【選択図】図4 |
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