MICROPROCESSING TREATMENT AGENT AND MICROPROCESSING TREATMENT METHOD

To provide: a microprocessing treatment agent and a microprocessing treatment method which make it possible to satisfactorily perform, in a laminated film at least including a silicon oxide film and a silicon nitride film, selective microprocessing of the silicon nitride film while inhibiting microp...

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Bibliographische Detailangaben
Hauptverfasser:	NISHIDA TETSUO, NAKADA KAZU, FUTAI KEIICHI, DATE KAZUYA, HASEBE RUI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	To provide: a microprocessing treatment agent and a microprocessing treatment method which make it possible to satisfactorily perform, in a laminated film at least including a silicon oxide film and a silicon nitride film, selective microprocessing of the silicon nitride film while inhibiting microprocessing of the silicon oxide film.SOLUTION: The microprocessing treatment agent at least includes a compound represented by a prescribed chemical formula, an inorganic phosphoric acid, a hexafluorosilicic acid compound, and water.SELECTED DRAWING: None 【課題】シリコン酸化膜及びシリコン窒化膜を少なくとも含む積層膜に於いて、シリコン酸化膜に対する微細加工を抑制しながら、シリコン窒化膜に対する選択的な微細加工を良好に行うことが可能な微細加工処理剤及び微細加工処理方法を提供する。【解決手段】微細加工処理剤は、所定の化学式で表される化合物、無機リン酸、ヘキサフルオロケイ酸化合物及び水を少なくとも含む。【選択図】なし