SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

To provide a semiconductor device capable of obtaining the strength of bent portions without causing insulation failure between electrode terminals at the bent portions of the electrode terminals.SOLUTION: A semiconductor device 101 includes a sealing resin 2 encapsulating a semiconductor element therein, a base portion 4 which is a base protruding from the sealing resin 2, a tip portion 6 which is an end portion of a tip extending from the base portion 4, and a plurality of electrode terminals 3 each having an intermediate portion 5 between the tip portion 6 and the base portion 4. The electrode terminals 3 are arranged along a first direction, and provided so as to protrude from the sealing resin 2 along a second direction perpendicular to the first direction. The intermediate portion 5 includes first intermediate portions 5A and 5B that are larger in width in the first direction than the base portion 4 and the tip portion 6, and a second intermediate portion 5C having a bent portion 8 which is larger in width in the first direction than the base portion 4 and the tip portion 6, narrower in the first direction than the first intermediate portions 5A and 5B, and bent in a third direction perpendicular to the first direction and the second direction.SELECTED DRAWING: Figure 3 【課題】電極端子の曲げ部における電極端子間の絶縁不良を起こさずに曲げ部の強度を得る半導体装置を提供する。【解決手段】半導体素子を内部に封止した封止樹脂２と、封止樹脂２から突出した根本である根本部４、根本部４から延伸した先の端部である先端部６、及び先端部６と根本部４との間に中間部５を有する複数の電極端子３と、を備えた半導体装置１０１であって、電極端子３は、第１方向に沿って並べられて第１方向と直交する第２方向に沿って封止樹脂２から突出するように設けられ、中間部５は、根本部４及び先端部６より第1方向における幅が太い第１の中間部５Ａ及び５Ｂと、根本部４及び先端部６よりも第1方向における幅が太く、第1の中間部５Ａ及び５Ｂよりも第1方向における幅が細く、第１方向及び第２方向と直交する第３方向に向かって折り曲げられた曲げ部８を有する第２の中間部５Ｃとを備える。【選択図】 図３