MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICE

To prevent impurities from mixing into a wafer and to prevent gas distribution resistance from increasing in a member for a semiconductor manufacturing device including porous plugs that permit gas distribution.SOLUTION: A member 10 for a semiconductor manufacturing device includes a ceramic plate 2...

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Bibliographische Detailangaben
Hauptverfasser: NAGAE TOMOTAKE, KUNO TATSUYA, YODO TAKUYA, INOUE SEIYA, OGISO YUSUKE
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To prevent impurities from mixing into a wafer and to prevent gas distribution resistance from increasing in a member for a semiconductor manufacturing device including porous plugs that permit gas distribution.SOLUTION: A member 10 for a semiconductor manufacturing device includes a ceramic plate 20 having a wafer mounting surface 21 on its upper surface and porous plugs 50 that allow gas to pass therethrough. The porous plugs 50 are placed in plug insertion holes 24 that penetrate the ceramic plate 20 in the vertical direction. The porous plugs 50 have first porous portions 51 exposed on the wafer mounting surface 21 and second porous portions 52 whose upper surfaces are covered by the first porous portions 51. The first porous portions 51 are purer and thinner than the second porous portions 52. The second porous portions 52 have a higher porosity than that of the first porous portions 51.SELECTED DRAWING: Figure 1 【課題】ガスの流通を許容する多孔質プラグを備えた半導体製造装置用部材において、不純物がウエハに混入するのを抑制すると共にガスの流通抵抗が大きくなるのを抑制する。【解決手段】半導体製造装置用部材10は、上面にウエハ載置面21を有するセラミックプレート20と、ガスの流通を許容する多孔質プラグ50とを備える。多孔質プラグ50は、セラミックプレート20を上下方向に貫通するプラグ挿入穴24に配置される。多孔質プラグ50は、ウエハ載置面21に露出する第1多孔質部51と、第1多孔質部51によって上面が覆われている第2多孔質部52とを有する。第1多孔質部51は、第2多孔質部52に比べて純度が高くて厚みが薄い。第2多孔質部52は、第1多孔質部51に比べて気孔率が高い。【選択図】図1