SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

To ensure the reliability of a semiconductor device and to improve the performance of the semiconductor device.SOLUTION: A semiconductor device including regions 1A and 2A has an n-type semiconductor substrate SUB having a surface TS and back surfaces BS1 and BS2, an IGBT formed on the semiconductor substrate SUB in the region 1A, and a diode formed on the semiconductor substrate SUB in the region 2A. Here, the thickness T1 of the semiconductor substrate SUB in the region 1A is thinner than the thickness T2 of the semiconductor substrate SUB in the region 2A.SELECTED DRAWING: Figure 5 【課題】半導体装置の信頼性を確保すると共に、半導体装置の性能を向上させる。【解決手段】領域１Ａおよび領域２Ａを含む半導体装置は、表面ＴＳおよび裏面ＢＳ１、ＢＳ２を有するｎ型の半導体基板ＳＵＢと、領域１Ａの半導体基板ＳＵＢに形成されたＩＧＢＴと、領域２Ａの半導体基板ＳＵＢに形成されたダイオードとを備える。ここで、領域１Ａの半導体基板ＳＵＢの厚さＴ１は、領域２Ａの半導体基板ＳＵＢの厚さＴ２よりも薄い。【選択図】図５