PROCESSOR SYSTEM, SEMICONDUCTOR INSPECTION SYSTEM, AND PROGRAM

To provide a technique capable of quantitatively grasping a change in a three-dimensional shape including a cross-sectional shape of a pattern in a wafer plane or between wafers non-destructively before performing cross-sectional observation.SOLUTION: A processor system of a semiconductor inspection system performs the steps of: acquiring a captured image by an electron microscope (SEM) about a sample (S102); calculating a first feature amount corresponding to each of a plurality of sites in a reference region defined on a sample surface about the reference region from the captured image (S103A); calculating a first statistic from the first feature amount in the plurality of sites (S103B); calculating a second feature amount corresponding to each of one or a plurality of sites in an evaluation region about each of a plurality of evaluation regions made to correspond to a reference region and defined as a dot or a region on the sample surface as a feature amount having the same kind as the first feature amount from the captured image (S104A); and obtaining a second feature amount after conversion by converting the second feature amount by the first statistic (S105).SELECTED DRAWING: Figure 6 【課題】断面観察を行う前に非破壊で、ウェハ面内あるいはウェハ間でのパターンの断面形状を含む立体形状の変化を定量的に把握することができる技術を提供する。【解決手段】半導体検査システムのプロセッサシステムは、試料についての電子顕微鏡（ＳＥＭ）による撮像画像を取得し（Ｓ１０２）、試料面上に定義される基準領域について、基準領域内の複数の箇所の各々の箇所に対応する第１特徴量を撮像画像から計算し（Ｓ１０３Ａ）、複数の箇所での第１特徴量から、第１統計値を計算し（Ｓ１０３Ｂ）、基準領域と対応させて試料面上に点または領域として定義される複数の評価領域の各々の評価領域について、評価領域内の１以上の箇所の各々の箇所に対応する第２特徴量を、第１特徴量と同じ種類の特徴量として、撮像画像から計算し（Ｓ１０４Ａ）、第２特徴量を第１統計値によって変換して変換後の第２特徴量を得る（Ｓ１０５）。【選択図】図６