MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

To provide a manufacturing method of a semiconductor device which can protect a back surface of a semiconductor wafer in a plating treatment after a rib is formed on the semiconductor wafer.SOLUTION: A manufacturing method of a semiconductor device comprises the steps of: forming a rib being convex in one direction heading to a second principal surface from a first principal surface in the thickness direction of a semiconductor wafer along the outer periphery of the semiconductor wafer on the second principal surface of the semiconductor wafer by partially removing the second principal surface side of the semiconductor wafer having the first principal surface and the second principal surface; removing the rib from the semiconductor wafer by cutting the semiconductor wafer in the thickness direction of the semiconductor wafer on the inner side in the plan view with respect to the region where the rib is formed; attaching the first tape to the second principal surface of the semiconductor wafer after the rib is removed from the semiconductor wafer; and performing plating on the first principal surface of the semiconductor wafer in such a state that a first tape is attached to the second principal surface of the semiconductor wafer.SELECTED DRAWING: Figure 1 【課題】半導体ウエハにリブを形成した後のめっき処理において半導体ウエハの裏面を保護できる半導体装置の製造方法を提供する。【解決手段】第１主面および第２主面を有する半導体ウエハの第２主面側を部分的に除去することで半導体ウエハの第２主面に半導体ウエハの外周に沿って半導体ウエハの厚さ方向のうち第１主面から第２主面に向かう一方方向に凸であるリブを形成し、半導体ウエハを、リブが形成されている領域よりも平面視における内側で半導体ウエハの厚さ方向に切断して半導体ウエハからリブを除去し、半導体ウエハからリブが除去された後、半導体ウエハの第２主面に第１テープを貼りつけ、半導体ウエハの第２主面に第１テープが貼りつけられた状態で、半導体ウエハの第１主面にめっきを行う。【選択図】図１