SEMICONDUCTOR STRUCTURE

To provide a semiconductor structure capable of suppressing the occurrence of a parasitic channel.SOLUTION: A semiconductor structure includes a substrate, a first nitride layer, a polarity reversal layer, a second nitride layer, and a third nitride layer. The first nitride layer is disposed over th...

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Bibliographische Detailangaben
Hauptverfasser:	SHIH YING-RU, TSAO CHENG-HAN, LIN PO-JUNG
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	To provide a semiconductor structure capable of suppressing the occurrence of a parasitic channel.SOLUTION: A semiconductor structure includes a substrate, a first nitride layer, a polarity reversal layer, a second nitride layer, and a third nitride layer. The first nitride layer is disposed over the substrate. A polarity reversal layer is disposed on the surface of the first nitride layer, and converts the non-metallic polar surface of the first nitride layer to the metallic polar surface of the polarity reversal layer. The second nitride layer is disposed on the polarity reversal layer. The third nitride layer is disposed on the second nitride layer. The substrate, the first nitride layer, the polarity reversal layer, and the second nitride layer contain elemental iron.SELECTED DRAWING: Figure 1 【課題】本発明は、寄生チャネルの発生を抑制することができる半導体構造を提供する【解決手段】基板と、第１の窒化物層と、極性反転層と、第２の窒化物層と、第３の窒化物層と、を含む半導体構造が提供される。前記第１の窒化物層は、前記基板上に配置される。極性反転層は、第１の窒化物層の表面上に配置され、第１の窒化物層の非金属極性表面を極性反転層の金属極性表面に変換する。第２の窒化物層は、極性反転層上に配置される。第３の窒化物層は、第２の窒化物層上に配置される。基板、第１の窒化物層、極性反転層、および第２の窒化物層は、鉄元素を含む。【選択図】図１