SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

To provide a substrate processing apparatus.SOLUTION: A substrate processing apparatus can include a chamber having an interior space, a support unit that supports the substrate in the interior space, a ring unit that is placed in the edge area of the support unit when viewed from the top, an impeda...

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Bibliographische Detailangaben
Hauptverfasser:	YOO SANG MOON, AN CHAN YONG, JO TAE HOON, GU JA MYUNG
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	To provide a substrate processing apparatus.SOLUTION: A substrate processing apparatus can include a chamber having an interior space, a support unit that supports the substrate in the interior space, a ring unit that is placed in the edge area of the support unit when viewed from the top, an impedance control unit electrically coupled to the ring unit and configured to regulate the flow or density of the plasma in the edge region of the substrate, and a filter unit disposed between the ring unit and the impedance control unit.SELECTED DRAWING: Figure 1 【課題】本発明は、基板処理装置を提供する。【解決手段】基板処理装置は、内部空間を有するチャンバと、前記内部空間で基板を支持する支持ユニットと、上部から眺める時、前記支持ユニットの縁領域に配置されるリングユニットと、前記リングユニットと電気的に連結され、前記基板の縁領域のプラズマの流動または密度を調節するように構成されるインピーダンス制御ユニットと、及び前記リングユニット、そして、前記インピーダンス制御ユニットの間に配置されるフィルターユニットを含むことができる。【選択図】図１