PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS
To provide photoresist compositions and pattern formation methods.SOLUTION: There is provided a photoresist composition, comprising: a first polymer comprising: a first repeating unit comprising a hydroxyaryl group; a second repeating unit comprising a first acid-labile group; and a third repeating...
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| creator | SUZANNE M COLEY PARK JONG KEUN CUI LI CEN YINJIE JAMES F CAMERON LEE CHOONG-BONG EMAD AQAD |
| description | To provide photoresist compositions and pattern formation methods.SOLUTION: There is provided a photoresist composition, comprising: a first polymer comprising: a first repeating unit comprising a hydroxyaryl group; a second repeating unit comprising a first acid-labile group; and a third repeating unit comprising a first base-soluble group having a pKa of 12 or less, and not comprising a hydroxyaryl group; wherein the first, second, and third repeating units of the first polymer are different from each other, and the first polymer is free of lactone groups; a second polymer comprising: a first repeating unit comprising a second acid-labile group, a second repeating unit comprising a lactone group, and a third repeating unit comprising a second base-soluble group having a pKa of 12 or less; wherein the first, second, and third repeating units of the second polymer are structurally different from each other; and a solvent, wherein the first polymer and the second polymer are different from each other.SELECTED DRAWING: None
【課題】 フォトレジスト組成物及びパターン形成方法を提供する。【解決手段】 第１のポリマーであって、ヒドロキシアリール基を含む第１の繰り返し単位と、第１の酸不安定基を含む第２の繰り返し単位と、１２以下のｐＫａを有し、且つヒドロキシアリール基を含まない第１の塩基可溶性基を含む第３の繰り返し単位とを含み、第１のポリマーの第１、第２及び第３の繰り返し単位は、互いに異なり、及び第１のポリマーは、ラクトン基を含まない、第１のポリマーと、第２のポリマーであって、第２の酸不安定基を含む第１の繰り返し単位と、ラクトン基を含む第２の繰り返し単位と、１２以下のｐＫａを有する第２の塩基可溶性基を含む第３の繰り返し単位とを含み、第２のポリマーの第１、第２及び第３の繰り返し単位は、互いに構造的に異なる、第２のポリマーと、溶媒とを含むフォトレジスト組成物であって、第１のポリマーと第２のポリマーとは、互いに異なる、フォトレジスト組成物。【選択図】なし |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2023099319A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2023099319A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2023099319A3</originalsourceid><addsrcrecordid>eNrjZDAL8PAP8Q9yDfYMDlFw9vcN8A_2DPH09wtWcPRzUQhwDAlxDfJTcPMP8nUECSv4uoZ4-LsE8zCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeK8AIwMjYwNLS2NDS0djohQBAKyYKPw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS</title><source>esp@cenet</source><creator>SUZANNE M COLEY ; PARK JONG KEUN ; CUI LI ; CEN YINJIE ; JAMES F CAMERON ; LEE CHOONG-BONG ; EMAD AQAD</creator><creatorcontrib>SUZANNE M COLEY ; PARK JONG KEUN ; CUI LI ; CEN YINJIE ; JAMES F CAMERON ; LEE CHOONG-BONG ; EMAD AQAD</creatorcontrib><description>To provide photoresist compositions and pattern formation methods.SOLUTION: There is provided a photoresist composition, comprising: a first polymer comprising: a first repeating unit comprising a hydroxyaryl group; a second repeating unit comprising a first acid-labile group; and a third repeating unit comprising a first base-soluble group having a pKa of 12 or less, and not comprising a hydroxyaryl group; wherein the first, second, and third repeating units of the first polymer are different from each other, and the first polymer is free of lactone groups; a second polymer comprising: a first repeating unit comprising a second acid-labile group, a second repeating unit comprising a lactone group, and a third repeating unit comprising a second base-soluble group having a pKa of 12 or less; wherein the first, second, and third repeating units of the second polymer are structurally different from each other; and a solvent, wherein the first polymer and the second polymer are different from each other.SELECTED DRAWING: None
【課題】 フォトレジスト組成物及びパターン形成方法を提供する。【解決手段】 第１のポリマーであって、ヒドロキシアリール基を含む第１の繰り返し単位と、第１の酸不安定基を含む第２の繰り返し単位と、１２以下のｐＫａを有し、且つヒドロキシアリール基を含まない第１の塩基可溶性基を含む第３の繰り返し単位とを含み、第１のポリマーの第１、第２及び第３の繰り返し単位は、互いに異なり、及び第１のポリマーは、ラクトン基を含まない、第１のポリマーと、第２のポリマーであって、第２の酸不安定基を含む第１の繰り返し単位と、ラクトン基を含む第２の繰り返し単位と、１２以下のｐＫａを有する第２の塩基可溶性基を含む第３の繰り返し単位とを含み、第２のポリマーの第１、第２及び第３の繰り返し単位は、互いに構造的に異なる、第２のポリマーと、溶媒とを含むフォトレジスト組成物であって、第１のポリマーと第２のポリマーとは、互いに異なる、フォトレジスト組成物。【選択図】なし</description><language>eng ; jpn</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230712&DB=EPODOC&CC=JP&NR=2023099319A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230712&DB=EPODOC&CC=JP&NR=2023099319A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SUZANNE M COLEY</creatorcontrib><creatorcontrib>PARK JONG KEUN</creatorcontrib><creatorcontrib>CUI LI</creatorcontrib><creatorcontrib>CEN YINJIE</creatorcontrib><creatorcontrib>JAMES F CAMERON</creatorcontrib><creatorcontrib>LEE CHOONG-BONG</creatorcontrib><creatorcontrib>EMAD AQAD</creatorcontrib><title>PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS</title><description>To provide photoresist compositions and pattern formation methods.SOLUTION: There is provided a photoresist composition, comprising: a first polymer comprising: a first repeating unit comprising a hydroxyaryl group; a second repeating unit comprising a first acid-labile group; and a third repeating unit comprising a first base-soluble group having a pKa of 12 or less, and not comprising a hydroxyaryl group; wherein the first, second, and third repeating units of the first polymer are different from each other, and the first polymer is free of lactone groups; a second polymer comprising: a first repeating unit comprising a second acid-labile group, a second repeating unit comprising a lactone group, and a third repeating unit comprising a second base-soluble group having a pKa of 12 or less; wherein the first, second, and third repeating units of the second polymer are structurally different from each other; and a solvent, wherein the first polymer and the second polymer are different from each other.SELECTED DRAWING: None
【課題】 フォトレジスト組成物及びパターン形成方法を提供する。【解決手段】 第１のポリマーであって、ヒドロキシアリール基を含む第１の繰り返し単位と、第１の酸不安定基を含む第２の繰り返し単位と、１２以下のｐＫａを有し、且つヒドロキシアリール基を含まない第１の塩基可溶性基を含む第３の繰り返し単位とを含み、第１のポリマーの第１、第２及び第３の繰り返し単位は、互いに異なり、及び第１のポリマーは、ラクトン基を含まない、第１のポリマーと、第２のポリマーであって、第２の酸不安定基を含む第１の繰り返し単位と、ラクトン基を含む第２の繰り返し単位と、１２以下のｐＫａを有する第２の塩基可溶性基を含む第３の繰り返し単位とを含み、第２のポリマーの第１、第２及び第３の繰り返し単位は、互いに構造的に異なる、第２のポリマーと、溶媒とを含むフォトレジスト組成物であって、第１のポリマーと第２のポリマーとは、互いに異なる、フォトレジスト組成物。【選択図】なし</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAL8PAP8Q9yDfYMDlFw9vcN8A_2DPH09wtWcPRzUQhwDAlxDfJTcPMP8nUECSv4uoZ4-LsE8zCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeK8AIwMjYwNLS2NDS0djohQBAKyYKPw</recordid><startdate>20230712</startdate><enddate>20230712</enddate><creator>SUZANNE M COLEY</creator><creator>PARK JONG KEUN</creator><creator>CUI LI</creator><creator>CEN YINJIE</creator><creator>JAMES F CAMERON</creator><creator>LEE CHOONG-BONG</creator><creator>EMAD AQAD</creator><scope>EVB</scope></search><sort><creationdate>20230712</creationdate><title>PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS</title><author>SUZANNE M COLEY ; PARK JONG KEUN ; CUI LI ; CEN YINJIE ; JAMES F CAMERON ; LEE CHOONG-BONG ; EMAD AQAD</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2023099319A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2023</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>SUZANNE M COLEY</creatorcontrib><creatorcontrib>PARK JONG KEUN</creatorcontrib><creatorcontrib>CUI LI</creatorcontrib><creatorcontrib>CEN YINJIE</creatorcontrib><creatorcontrib>JAMES F CAMERON</creatorcontrib><creatorcontrib>LEE CHOONG-BONG</creatorcontrib><creatorcontrib>EMAD AQAD</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SUZANNE M COLEY</au><au>PARK JONG KEUN</au><au>CUI LI</au><au>CEN YINJIE</au><au>JAMES F CAMERON</au><au>LEE CHOONG-BONG</au><au>EMAD AQAD</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS</title><date>2023-07-12</date><risdate>2023</risdate><abstract>To provide photoresist compositions and pattern formation methods.SOLUTION: There is provided a photoresist composition, comprising: a first polymer comprising: a first repeating unit comprising a hydroxyaryl group; a second repeating unit comprising a first acid-labile group; and a third repeating unit comprising a first base-soluble group having a pKa of 12 or less, and not comprising a hydroxyaryl group; wherein the first, second, and third repeating units of the first polymer are different from each other, and the first polymer is free of lactone groups; a second polymer comprising: a first repeating unit comprising a second acid-labile group, a second repeating unit comprising a lactone group, and a third repeating unit comprising a second base-soluble group having a pKa of 12 or less; wherein the first, second, and third repeating units of the second polymer are structurally different from each other; and a solvent, wherein the first polymer and the second polymer are different from each other.SELECTED DRAWING: None
【課題】 フォトレジスト組成物及びパターン形成方法を提供する。【解決手段】 第１のポリマーであって、ヒドロキシアリール基を含む第１の繰り返し単位と、第１の酸不安定基を含む第２の繰り返し単位と、１２以下のｐＫａを有し、且つヒドロキシアリール基を含まない第１の塩基可溶性基を含む第３の繰り返し単位とを含み、第１のポリマーの第１、第２及び第３の繰り返し単位は、互いに異なり、及び第１のポリマーは、ラクトン基を含まない、第１のポリマーと、第２のポリマーであって、第２の酸不安定基を含む第１の繰り返し単位と、ラクトン基を含む第２の繰り返し単位と、１２以下のｐＫａを有する第２の塩基可溶性基を含む第３の繰り返し単位とを含み、第２のポリマーの第１、第２及び第３の繰り返し単位は、互いに構造的に異なる、第２のポリマーと、溶媒とを含むフォトレジスト組成物であって、第１のポリマーと第２のポリマーとは、互いに異なる、フォトレジスト組成物。【選択図】なし</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS |
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