APPARATUS AND METHOD FOR MANUFACTURING GALLIUM NITRIDE LAYER

To prevent supply line for supplying gallium trichloride gas from being blocked.SOLUTION: A formation device 20 includes: a first space 211 arranging metal gallium 220; a second space 212 positioned between the first space 211 and a supply line 310; a first guiding line 231 for guiding chlorine gas...

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Bibliographische Detailangaben
Hauptverfasser:	HARA KAZUTO, ONDA SHOICHI, YAMAMOTO EIZO, SASAOKA CHIAKI, KOJIMA ATSUSHI, OZAWA MOTOI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	To prevent supply line for supplying gallium trichloride gas from being blocked.SOLUTION: A formation device 20 includes: a first space 211 arranging metal gallium 220; a second space 212 positioned between the first space 211 and a supply line 310; a first guiding line 231 for guiding chlorine gas to the first space 211; and a second guiding line 232 for guiding the chlorine gas to the second space 212. The second guiding line 232 guides chlorine gas more than the amount of chlorine gas necessary for forming gallium monochloride gas formed by guiding the chlorine gas from the first guiding line 231 into gallium trichloride gas.SELECTED DRAWING: Figure 1 【課題】三塩化ガリウムガスを供給する供給配管が閉塞することを抑制する。【解決手段】生成装置２０は、金属ガリウム２２０が配置される第１空間２１１および第１空間２１１と供給配管３１０との間に位置する第２空間２１２と、第１空間２１１に塩素ガスを誘導する第１誘導配管２３１と、第２空間２１２に塩素ガスを誘導する第２誘導配管２３２と、を有する構成とする。そして、第２誘導配管２３２は、第１誘導配管２３１から塩素ガスが誘導されることで生成された一塩化ガリウムガスを三塩化ガリウムガスにするのに必要な塩素ガスの量よりも多い塩素ガスが誘導されるようにする。【選択図】図１