BONDING WIRE AND SEMICONDUCTOR DEVICE

To provide a bonding wire superior in long-term reliability, which can achieve a satisfactory circular form as to FAB shape when FAB is put in contact with an electrode and crushed.SOLUTION: In a semiconductor device M, a bonding wire W comprises: 0.005 mass% or more and 2.0 mass% or less of In; one...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TANAHASHI AKIRA, TAKIGAWA YOSHIMI
Format: Patent
Sprache:eng ; jpn
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