SEMICONDUCTOR DEVICE

To provide a semiconductor device with excellent electric characteristics.SOLUTION: A semiconductor device includes a conductor, a first insulator in contact with a side surface of the conductor, a second insulator in contact with an upper surface of the conductor and an upper surface of the first insulator, and an oxide on the second insulator. The oxide includes a region overlapping with the conductor through the second insulator. The maximum height (Rz) of a roughness curve on the upper surface of the conductor is 6.0 nm or less. The region includes crystals. A c-axis of the crystal is aligned in a normal direction of the upper surface of the conductor.SELECTED DRAWING: Figure 1 【課題】良好な電気特性を有する半導体装置を提供する。【解決手段】導電体と、導電体の側面に接する第１の絶縁体と、導電体の上面、および、第１の絶縁体の上面と接する第２の絶縁体と、第２の絶縁体上の酸化物と、を有し、酸化物は、第２の絶縁体を介して、導電体と重畳する領域を有し、導電体の上面における、粗さ曲線の最大高さ（Ｒｚ）が６．０ｎｍ以下であり、領域は、結晶を含み、結晶のｃ軸は、導電体の上面の法線方向に配向している半導体装置である。【選択図】図１