EXPOSURE METHOD AND EXPOSURE SYSTEM

To provide an exposure method and an exposure system which can suppress reduction in productivity even when the size of an interposer is increased.SOLUTION: An exposure method includes a first exposure step, and a second exposure step. The first exposure step exposes a first pattern on a resist on a...

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Bibliographische Detailangaben
Hauptverfasser:	TAKAMATSU DAISUKE, HIKI TATSUYA, HASHIMOTO MASAAKI, NOKITA KANTA, TAKAHASHI RYOTARO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	To provide an exposure method and an exposure system which can suppress reduction in productivity even when the size of an interposer is increased.SOLUTION: An exposure method includes a first exposure step, and a second exposure step. The first exposure step exposes a first pattern on a resist on a substrate using a first exposure device having first exposure accuracy. The second exposure step exposes a second pattern different from the first pattern on the resist on which the first pattern has been exposed using a second exposure device having second exposure accuracy different from the first exposure accuracy.SELECTED DRAWING: Figure 5 【課題】インターポーザが大型化しても、生産性の低下を抑えることができる露光方法および露光システムを提供する。【解決手段】本発明の一形態に係る露光方法は、第１の露光工程と、第２の露光工程とを有する。前記第１の露光工程は、第１の露光精度を有する第１の露光装置を用いて、基板上のレジストに第１のパターンを露光する。前記第２の露光工程は、前記第１の露光精度とは異なる第２の露光精度を有する第２の露光装置を用いて、前記第１のパターンを露光した前記レジストに、第１のパターンとは異なる第２のパターンを露光する。【選択図】図５