HIGH POWER MMIC DEVICE WITH BYPASS-GATED TRANSISTOR
To provide a transistor.SOLUTION: A transistor includes a plurality of gate fingers extending in a first direction and spaced from each other in a second direction orthogonal to the first direction, a gate bus, a first resistor interposed between the gate bus and a first segment of a first gate fing...
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| creator | KHALED FAYED SIMON M WOOD DONALD FARRELL MITCHELL FLOWERS JAMES MILLIGAN |
| description | To provide a transistor.SOLUTION: A transistor includes a plurality of gate fingers extending in a first direction and spaced from each other in a second direction orthogonal to the first direction, a gate bus, a first resistor interposed between the gate bus and a first segment of a first gate finger of the plurality of gate fingers, and a second resistor interposed between the gate bus and a second segment of the first gate finger.SELECTED DRAWING: Figure 8
【課題】トランジスタを提供する。【解決手段】トランジスタであって、第１の方向に延在し、当該第１の方向と直交する第２の方向に互いに間隔を空けて配置された複数のゲートフィンガーと、ゲートバスと、前記ゲートバスと前記複数のゲートフィンガーのうちの第１のゲートフィンガーの第１のセグメントとの間に介在される第１の抵抗器と、前記ゲートバスと前記第１のゲートフィンガーの第２のセグメントとの間に介在される第２の抵抗器と、を備える。【選択図】図８ |
| format | Patent |
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【課題】トランジスタを提供する。【解決手段】トランジスタであって、第１の方向に延在し、当該第１の方向と直交する第２の方向に互いに間隔を空けて配置された複数のゲートフィンガーと、ゲートバスと、前記ゲートバスと前記複数のゲートフィンガーのうちの第１のゲートフィンガーの第１のセグメントとの間に介在される第１の抵抗器と、前記ゲートバスと前記第１のゲートフィンガーの第２のセグメントとの間に介在される第２の抵抗器と、を備える。【選択図】図８</description><language>eng ; jpn</language><subject>AMPLIFIERS ; BASIC ELECTRIC ELEMENTS ; BASIC ELECTRONIC CIRCUITRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230613&DB=EPODOC&CC=JP&NR=2023081974A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230613&DB=EPODOC&CC=JP&NR=2023081974A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KHALED FAYED</creatorcontrib><creatorcontrib>SIMON M WOOD</creatorcontrib><creatorcontrib>DONALD FARRELL</creatorcontrib><creatorcontrib>MITCHELL FLOWERS</creatorcontrib><creatorcontrib>JAMES MILLIGAN</creatorcontrib><title>HIGH POWER MMIC DEVICE WITH BYPASS-GATED TRANSISTOR</title><description>To provide a transistor.SOLUTION: A transistor includes a plurality of gate fingers extending in a first direction and spaced from each other in a second direction orthogonal to the first direction, a gate bus, a first resistor interposed between the gate bus and a first segment of a first gate finger of the plurality of gate fingers, and a second resistor interposed between the gate bus and a second segment of the first gate finger.SELECTED DRAWING: Figure 8
【課題】トランジスタを提供する。【解決手段】トランジスタであって、第１の方向に延在し、当該第１の方向と直交する第２の方向に互いに間隔を空けて配置された複数のゲートフィンガーと、ゲートバスと、前記ゲートバスと前記複数のゲートフィンガーのうちの第１のゲートフィンガーの第１のセグメントとの間に介在される第１の抵抗器と、前記ゲートバスと前記第１のゲートフィンガーの第２のセグメントとの間に介在される第２の抵抗器と、を備える。【選択図】図８</description><subject>AMPLIFIERS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDD28HT3UAjwD3cNUvD19XRWcHEN83R2VQj3DPFQcIoMcAwO1nV3DHF1UQgJcvQL9gwO8Q_iYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBkbGBhaGluYmjsZEKQIA5Z4nkg</recordid><startdate>20230613</startdate><enddate>20230613</enddate><creator>KHALED FAYED</creator><creator>SIMON M WOOD</creator><creator>DONALD FARRELL</creator><creator>MITCHELL FLOWERS</creator><creator>JAMES MILLIGAN</creator><scope>EVB</scope></search><sort><creationdate>20230613</creationdate><title>HIGH POWER MMIC DEVICE WITH BYPASS-GATED TRANSISTOR</title><author>KHALED FAYED ; SIMON M WOOD ; DONALD FARRELL ; MITCHELL FLOWERS ; JAMES MILLIGAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2023081974A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2023</creationdate><topic>AMPLIFIERS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KHALED FAYED</creatorcontrib><creatorcontrib>SIMON M WOOD</creatorcontrib><creatorcontrib>DONALD FARRELL</creatorcontrib><creatorcontrib>MITCHELL FLOWERS</creatorcontrib><creatorcontrib>JAMES MILLIGAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KHALED FAYED</au><au>SIMON M WOOD</au><au>DONALD FARRELL</au><au>MITCHELL FLOWERS</au><au>JAMES MILLIGAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>HIGH POWER MMIC DEVICE WITH BYPASS-GATED TRANSISTOR</title><date>2023-06-13</date><risdate>2023</risdate><abstract>To provide a transistor.SOLUTION: A transistor includes a plurality of gate fingers extending in a first direction and spaced from each other in a second direction orthogonal to the first direction, a gate bus, a first resistor interposed between the gate bus and a first segment of a first gate finger of the plurality of gate fingers, and a second resistor interposed between the gate bus and a second segment of the first gate finger.SELECTED DRAWING: Figure 8
【課題】トランジスタを提供する。【解決手段】トランジスタであって、第１の方向に延在し、当該第１の方向と直交する第２の方向に互いに間隔を空けて配置された複数のゲートフィンガーと、ゲートバスと、前記ゲートバスと前記複数のゲートフィンガーのうちの第１のゲートフィンガーの第１のセグメントとの間に介在される第１の抵抗器と、前記ゲートバスと前記第１のゲートフィンガーの第２のセグメントとの間に介在される第２の抵抗器と、を備える。【選択図】図８</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AMPLIFIERS BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | HIGH POWER MMIC DEVICE WITH BYPASS-GATED TRANSISTOR |
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