HIGH POWER MMIC DEVICE WITH BYPASS-GATED TRANSISTOR
To provide a transistor.SOLUTION: A transistor includes a plurality of gate fingers extending in a first direction and spaced from each other in a second direction orthogonal to the first direction, a gate bus, a first resistor interposed between the gate bus and a first segment of a first gate fing...
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| Format: | Patent |
| Sprache: | eng ; jpn |
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| Zusammenfassung: | To provide a transistor.SOLUTION: A transistor includes a plurality of gate fingers extending in a first direction and spaced from each other in a second direction orthogonal to the first direction, a gate bus, a first resistor interposed between the gate bus and a first segment of a first gate finger of the plurality of gate fingers, and a second resistor interposed between the gate bus and a second segment of the first gate finger.SELECTED DRAWING: Figure 8
【課題】トランジスタを提供する。【解決手段】トランジスタであって、第１の方向に延在し、当該第１の方向と直交する第２の方向に互いに間隔を空けて配置された複数のゲートフィンガーと、ゲートバスと、前記ゲートバスと前記複数のゲートフィンガーのうちの第１のゲートフィンガーの第１のセグメントとの間に介在される第１の抵抗器と、前記ゲートバスと前記第１のゲートフィンガーの第２のセグメントとの間に介在される第２の抵抗器と、を備える。【選択図】図８ |
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