IMAGE SENSOR

To provide an image sensor with improved light characteristic efficiency and sensitivity by improving dark current characteristics.SOLUTION: An image sensor according to the present invention includes a photoelectric conversion element region disposed within a substrate, and a separation structure having a first region that is formed in the direction from the first surface of the substrate to the second surface facing the first surface, surrounds the photoelectric conversion element region in a plan view, and is adjacent to the side surface of the photoelectric conversion element region, and a second region adjacent to each corner of the photoelectric conversion element region, and in plan view, the separation structure includes a first separation layer surrounding each photoelectric conversion element region, a second separation layer surrounding the first separation layer, a first gap fill pattern filling at least a portion of the space between the second separation layers in the first region, and a second gap fill pattern filling at least a portion of the space between the second separation layers in the second region.SELECTED DRAWING: Figure 1a 【課題】暗電流特性を改善して光特性効率及び感度を向上させたイメージセンサを提供する。【解決手段】本発明のイメージセンサは、基板内に配置された光電変換素子領域と、基板の第１面から第１面に対向する第２面の方向に形成され、平面図上で、光電変換素子領域を囲み、光電変換素子領域の側面に隣接する第１領域及び光電変換素子領域の各コーナーに隣接する第２領域を有する分離構造物と、を備え、分離構造物は、平面図上で、光電変換素子領域をそれぞれ囲む第１分離層、第１分離層を囲む第２分離層、第１領域で第２分離層間の空間の少なくとも一部を満たす第１ギャップフィルパターン、及び第２領域で第２分離層間の空間の少なくとも一部を満たす第２ギャップフィルパターンを含む。【選択図】図１ａ