SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
To provide a semiconductor device having a reservoir capacitor and a method for manufacturing the same, in which a pillar-shaped first electrode is placed between a substrate and a second electrode to increase the surface area of the capacitor.SOLUTION: A reservoir capacitor can have a substrate, a...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | eng ; jpn |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | To provide a semiconductor device having a reservoir capacitor and a method for manufacturing the same, in which a pillar-shaped first electrode is placed between a substrate and a second electrode to increase the surface area of the capacitor.SOLUTION: A reservoir capacitor can have a substrate, a pillar-shaped first electrode located above the substrate, a second electrode covering the sides and top surface of the first electrode above the substrate and the first electrode, and a dielectric layer interposed between the first and second electrodes.SELECTED DRAWING: Figure 2
【課題】基板と第２の電極との間にピラー状の第１の電極を配置し、キャパシタの表面積を増加させることができるリザーバーキャパシタを備える半導体装置及びその製造方法を提供すること。【解決手段】本実施形態に係るリザーバーキャパシタは、基板と、前記基板上部に配置されたピラー状の第１の電極と、前記基板及び第１の電極の上部に前記第１の電極の側面及び上部面をカバーリングする第２の電極と、前記第１の電極及び第２の電極の間に介在された誘電層とを備えることができる。【選択図】図２ |
|---|