SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
To provide a semiconductor device and a manufacturing method thereof capable of preventing crack defects.SOLUTION: A third side surface 17c of a molded portion 17 has inclined surfaces 18 and 19 inclined in a direction in which the central portion in the vertical direction is convex. A mold resin 14...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; jpn |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | To provide a semiconductor device and a manufacturing method thereof capable of preventing crack defects.SOLUTION: A third side surface 17c of a molded portion 17 has inclined surfaces 18 and 19 inclined in a direction in which the central portion in the vertical direction is convex. A mold resin 14 further has a residual portion 20 provided in the central portion of the third side surface 17c and a dowel portion 21 provided between the inclined surface 18 and the residual portion 20. The dowel portion 21 protrudes laterally beyond the inclined surface 18. The residual portion 20 protrudes laterally from the dowel portion 21 and has a fractured surface perpendicular to the vertical direction.SELECTED DRAWING: Figure 3
【課題】クラック不良を防ぐことができる半導体装置及びその製造方法を得る。【解決手段】モールド成形部１７の第３の側面１７ｃは上下方向の中央部が凸となる方向に傾斜した傾斜面１８，１９を有する。モールド樹脂１４は、第３の側面１７ｃの中央部に設けられた残留部２０と、傾斜面１８と残留部２０との間に設けられたダボ部２１とを更に有する。ダボ部２１は、傾斜面１８よりも横方向に突出している。残留部２０は、ダボ部２１よりも横方向に突出し、上下方向に垂直な破断面を有する。【選択図】図３ |
|---|