PRESSURE SENSOR AND METHOD FOR MANUFACTURING PRESSURE SENSOR
To provide a pressure sensor capable of reducing variations in detecting pressures.SOLUTION: A pressure sensor comprises: a semiconductor sensor chip having a substrate including a piezoresistive element, and a pressure-receiving structure provided on a first surface of the substrate and for receivi...
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Format: | Patent |
Sprache: | eng ; jpn |
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Zusammenfassung: | To provide a pressure sensor capable of reducing variations in detecting pressures.SOLUTION: A pressure sensor comprises: a semiconductor sensor chip having a substrate including a piezoresistive element, and a pressure-receiving structure provided on a first surface of the substrate and for receiving pressures; a plurality of bump structures; and a support medium base separated from the semiconductor sensor chip by the bump structure and supporting the semiconductor sensor chip through the bump structure. Each of the bump structures comprises, a copper bump and a gold coating film on the copper bump. The bump structure connects a second surface opposite to the first surface of the substrate to a main surface of the support medium base.SELECTED DRAWING: Figure 1
【課題】圧力の検知ばらつきを低減できる圧力センサを提供する。【解決手段】圧力センサは、ピエゾ抵抗素子を含む基板と、前記基板の第1面上に設けられ圧力を受けるための受圧構造物とを有する半導体センサチップと、複数のバンプ構造体と、前記バンプ構造体によって前記半導体センサチップから隔てられて前記バンプ構造体を介して前記半導体センサチップを支持する支持体ベースを備える。前記バンプ構造体の各々は、銅バンプと、銅バンプ上の金被覆膜とを含み、前記バンプ構造体は、前記基板の前記第1面の反対側にある第2面と前記支持体ベースの主面とを接続する。【選択図】図1 |
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